Method of manufacturing semiconductor device
US7135416B2 · kind B2 · utility
2Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jun 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device including a gallium nitride related semiconductor. The method include preparing a substrate having surface of a gallium nitride related semiconductor; contacting the surface with atomic nitrogen, which is obtained by decomposing a nitrogen-containing gas in a catalytic reaction, to nitride the surface; and forming, on the surface, a gate electrode and source and drain electrodes opposing each other across the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.