Pressure sensor
US7135749B2 · kind B2 · utility
11Cited by
11References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2005 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0073
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.