Programmable semi-fusible link read only memory and method of margin testing same
US7136322B2 · kind B2 · utility
18Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable read only memory includes a matrix of semi-fusible link memory cells, each including a semi-fusible link having an intact impedance and a blown impedance; a bit line voltage supply switching circuit for applying a current to at least one selected bit line; a word line address decoder for selecting a word line; and a program control logic circuit for blowing the semi-fusible links in the memory cells identified by the intersection of the selected word and bit lines; a method is disclosed of testing programmed and unprogrammed read only memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.