PN diode optical modulators fabricated in strip loaded waveguides
US7136544B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2004 |
| Grant date | Nov 14, 2006 |
| Priority date | — |
| Expiry date | Sep 24, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.