MgO vapor deposition material and method for preparation thereof
US7138350B2 · kind B2 · utility
4Cited by
1References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2002 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | May 19, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Polycrystals with a MgO purity of at least 99.0%, a relative density of at least 90.0%, a sulfur S content of 0.01 to 50 ppm, a chlorine Cl content of 0.01 to 50 ppm, a nitrogen N content of 0.01 to 200 ppm, and a phosphorus P content of 0.01 to 30 ppm. Even when vapor deposition is conducted using electron beam deposition, almost no splash occurs, and the film characteristics of the product MgO film can also be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.