Dielectric material and the method of preparing the same
US7138352B2 · kind B2 · utility
3Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2005 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/408
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a novel ZnTiO3-based dielectric material, having the composition represented by the formula (Zn1-aMga)(Ti1-b-cMnbDc)dO3, wherein D is an element having a valence of 5 or above, 0≦a≦0.5, c≦b≦0.1, 0<c≦0.1, 1≦d≦1.5, which has properties of ultra low sintering temperature, high reliability, and high dielectric strength, and is capable of being applied to produce low capacitance multilayer ceramic capacitor with high quality factor, low ESR, and high insulation resistance. The present invention also relates to a method of preparing such a novel ZnTiO3-based dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.