Doping method and semiconductor device fabricated using the method
US7138688B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 5, 2003 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.