Current sensor using mirror MOSFET and PWM inverter incorporating the same
US7138778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Jan 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A current sensor has a power MOSFET Q1, connected between an electric load and a power supply, for controlling current that flows through said electric load, a mirror MOSFET Q2, connected in parallel to said power MOSFET Q1, in which a portion of the current flowing through said power MOSFET flows, and a current detection resistor RC connected between a source electrode of said power MOSFET and a source electrode of said mirror MOSFET. An inverting amplifier circuit CP of the current sensor 3 inverts and amplifies the voltage signal, which has been converted to voltage by the current detection resistor RC, and outputs the signal, thereby converting positive and negative voltages generated across the current detection resistor RC to a positive voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.