System and method for protecting a load from a voltage source
US7139157B2 · kind B2 · utility
10Cited by
30References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Feb 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H3/202
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) is used as the protection circuit. The gate is grounded through an electrical element. The voltage source is connected to the drain of the FET. The load is connected to the source of the FET. At low input voltages, the FET conducts in body diode mode. At higher input voltages, the FET turns “on” and conducts more efficiently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.