Plasma processing apparatus and method
US7140321B2 · kind B2 · utility
11Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2003 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Oct 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32192
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a vacuum chamber that accommodates an object to be processed, and provides a plasma process to the object in a vacuum or reduced pressure environment, a dielectric for transmitting microwaves to the vacuum chamber and for maintaining the vacuum or reduced environment of the vacuum chamber, a plate that has slots for guiding the microwaves to the dielectric, and a temperature control mechanism that has a cooling channel between the plate and the dielectric, and controls temperature of the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.