Method for manufacturing a silicon structure
US7141116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2005 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Apr 1, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B1/023
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are improved methods for forming silicon films, particularly single-crystal silicon films from amorphous silicon films in which a single-crystal silicon substrate is prepared by removing any native oxide, typically using an aqueous HF solution, and placed in a reaction chamber. The substrate is then heated from about 350° C. to a first deposition temperature under a first ambient to induce single-crystal epitaxial silicon deposition primarily on exposed silicon surfaces. The substrate is then heated to a second deposition temperature under a second ambient that will maintain the single-crystal epitaxial silicon deposition on exposed single-crystal silicon while inducing amorphous epitaxial silicon deposition on insulating surfaces. The amorphous epitaxial silicon can then be converted to single-crystal silicon using a solid phase epitaxy process to form a thin, high quality silicon layer. The first and second ambients include at least one silicon source gas and may include a non-oxidizing carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.