Semiconductor light emitting device and method for manufacturing same
US7141445B2 · kind B2 · utility
17Cited by
16References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.