Fabrication of p-type group II-VI semiconductors
US7141489B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 19, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Commercially viable methods of manufacturing p-type group II–VI semiconductor materials are disclosed. A thin film of group II–VI semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of group II elements, group VI elements, and one or more p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group II atoms, group VI atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liquid deposition process may be used to deposit the group II atoms, group VI atoms, and p-type dopant atoms in a predetermined orientation to result in the fabrication of the group II–VI semiconductor material. The resulting semiconductor thin film is a persistent p-type semiconductor, and the p-type dopant concentration is greater than about 1016 atoms·cm−3. The semiconductor resistivity is less than about 0.5 ohm·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.