Semiconductor device, method of manufacturing three-dimensional stacking type semiconductor device, circuit board, and electronic instrument
US7141493B2 · kind B2 · utility
12Cited by
5References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Oct 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/07811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate and an electrode layer formed on the substrate, and the electrode layer includes a plurality of conductive layers and an insulating layer which are stacked, the insulating layer being interposed between two of the conductive layers adjacent each other, a through-hole being formed in each of the conductive layers lower than an uppermost conductive layer among the conductive layers, and the through-hole being filled with an insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.