Method of treating microelectronic substrates
US7141496B2 · kind B2 · utility
4Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Feb 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.