Method of forming an ohmic contact in wide band semiconductor
US7141498B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.