Method and structure for buried circuits and devices
US7141853B2 · kind B2 · utility
373Cited by
33References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Jun 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device.Entire circuits can be designed around this technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.