Low noise semiconductor amplifier
US7141865B2 · kind B2 · utility
Inventor
Key dates
| Filing date | May 22, 2002 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Oct 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/184
Abstract
A Low Noise semiconductor amplifier structure formed from layers of differently doped semiconductor material.This structure when properly biased will amplify voltage signals applied to the input terminal (Base1 or signal-base), and provide the same signal, amplified at the terminal designated as the output or collector. The semiconductor material can be any of a number of semiconductor materials, Germanium, Silicon, Gallium-Arsenide or any material with suitable semi-conducting properties. The structure can be any BJT (Bipolar Junction Transistor) form.The presence of an additional, distinct highly doped layer indicated as Base2 in the BJT form, provides an electrical noise suppression function. This inhibits intrinsic electrical noise, and improves the high frequency performance of the device in conjunction with an external capacitor connected to this new Base2 (or anti-base) region. This layer when properly biased reduces the inherent noise levels due to shot and flicker noise in the semiconductor structure to very low levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.