Programmable sub-surface aggregating metallization structure and method of making same
US7142450B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 27, 2004 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Mar 23, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable sub-surface aggregating metallization structure (“PSAM”) includes an ion conductor such as a chalcogenide-glass which includes metal ions and at least two electrodes disposed at opposing surfaces of the ion conductor. Preferably, the ion conductor includes a chalcogenide material with Group IB or Group IIB metals. One of two electrodes is preferably configured as a cathode and the other as an anode. When a voltage is applied between the anode and cathode, a metal dendrite grows from the cathode through the ion conductor towards the anode. The growth rate of the dendrite may be stopped by removing the voltage or the dendrite may be retracted back towards the cathode by reversing the voltage polarity at the anode and cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.