Semiconductor laser
US7142576B2 · kind B2 · utility
0Cited by
9References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2005 |
| Grant date | Nov 28, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes an active layer formed on a substrate and a pair of cladding layers sandwiching the active layer. On at least one of resonator end faces of the semiconductor laser, a first dielectric film with hydrogen added therein is provided. Between the first dielectric film and the resonator end face, a second dielectric film for suppressing the diffusion of hydrogen is provided. Even when a semiconductor laser with an end face coating film including a hydrogen-added film is exposed to high temperatures, peeling of the end face coating film and deterioration of the end face coating film can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.