Effective photoresist stripping process for high dosage and high energy ion implantation
US7144673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Apr 14, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present subject matter relates to a method of stripping a photoresist after the photoresist film has been subjected to a high dose and high energy ion implant process. The method involves soaking the photoresist film in DI water, dry etching with oxygen plasma, and immersing in Caro's acid solution to improve the throughput of removing the film from the underlying substrate. The method can also be used to strip photoresist that has been hardened or altered by other types of processes such as dry etch transfer steps and chemical treatments. In some applications, the dry etching step may be omitted from the stripping process or the dry etching step may be combined with the water soak in an integrated process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.