Method of producing crystalline semiconductor material and method of fabricating semiconductor device
US7144793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2003 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.