Semiconductor device with a cavity therein and a method of manufacturing the same
US7145215B2 · kind B2 · utility
6Cited by
6References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Dec 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.