Single chip power amplifier and envelope modulator
US7145385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Dec 5, 2006 |
| Priority date | — |
| Expiry date | Sep 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/504
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
RF polar modulation circuit has a self-compensated temperature stable envelope controller and self-compensated temperature stable power amplifier bias. The circuit has an adaptive current-to-voltage modulation interface with pre-distortion compensation capability. AM/PM distortion are compensated for envelope dependent power amplifier transistor biasing. Automatic compensation is provided for RF loads that are higher or lower than nominal loads. This Abstract is provided to comply with rules requiring an Abstract that allows a searcher or other reader to quickly ascertain subject matter of the technical disclosure. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.