Vertical semiconductor devices or chips and method of mass production of the same
US7148075B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jun 5, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Apr 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical semiconductor chips or devices comprising GaN, GaInP, and GaInNP based LEDs with higher crystal quality, higher throughput, higher yield, and lower cost. The methods comprise the following process steps in the order presented: growing a first-type cladding layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing an electrically conductive supporting plate, removing the original substrate and the first-type cladding layer exposed, growing an epitaxial layer comprising an active layer and a second-type cladding layer, disposing a second-electrode, and dicing into individual dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.