Process for production of semiconductor substrate
US7148119B1 · kind B1 · utility
281Cited by
49References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1998 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68363
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.