Method for manufacturing metal structure having different heights
US7148141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Dec 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01078
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.