Nitride semiconductor light emitting diode and fabrication method thereof
US7148514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Aug 12, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
Abstract
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.