High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications
US7148556B2 · kind B2 · utility
2Cited by
3References
15Claims
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Key dates
| Filing date | Nov 9, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Nov 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.