Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness
US7149062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Feb 6, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49067
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.