Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
US7149118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Jan 1, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3477
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.