Low loss contact structures for silicon based optical modulators and methods of manufacture
US7149388B2 · kind B2 · utility
6Cited by
53References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Aug 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/105
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. In one aspect of the invention an electrical contact structure is provided. The electrical contact structure comprises a connecting portion that electrically connects an active region of at least one of the silicon layers to a contact portion of the electrical contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.