Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
US7150796B2 · kind B2 · utility
9Cited by
13References
1Claims
0Family size
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Inventors
Key dates
| Filing date | Feb 25, 2004 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Feb 25, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without opening the chamber and without causing chamber downtime, comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.