Ion beam for target recovery
US7150811B2 · kind B2 · utility
3Cited by
27References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Jun 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A charged particle beam apparatus and method for locally removing material from a predetermined location on a workpiece, such as the removal of a metallization layer covering an alignment mark on a wafer. The invention is particularly suited for high-volume mass production of semiconductor chips or electromechanical devices. According to one embodiment of the invention, a layer of material covering an alignment mark on a wafer is removed by ion beam sputtering using a non-LMIS beam directed at an oblique angle to the sample surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.