Doped organic semiconductor materials and process for their preparation

US7151007B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Ansgar Werner · Dresden, DE
• Fenghong Li · Dresden, DE
• Martin Pfeiffer · Winnenden, DE

Key dates

• Filing date: Aug 17, 2004
• Grant date: Dec 19, 2006
• Expiry date: Dec 10, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present invention relates to a process for the preparation of doped organic semiconductor materials having an increased charge carrier density and effective charge carrier mobility, by doping with a dopant, a process in which after mixing the dopant into the organic semiconductor material, hydrogen, carbon monoxide, nitrogen or hydroxyl radicals are split off and at least one electron is transferred to the semiconductor material or from the semiconductor material. The process is distinguished by the fact that an uncharged organic compound is used as dopant. Doped organic semiconductor materials are obtainable by one of the processes. The semiconductor materials are distinguished by the fact that the doped layer contains cations of at least one organic compound, the uncharged form of the organic compound being unstable in air.