Semiconductors containing perfluoroether acyl oligothiophene compounds
US7151276B2 · kind B2 · utility
36Cited by
32References
21Claims
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Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | May 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.