Selective etching of silicon carbide films

US7151277B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Di Gao · Zhejiang, CN
• Roger T. Howe · Lafayette, US
• Roya Maboudian · Orinda, US

Key dates

• Filing date: Jul 3, 2003
• Grant date: Dec 19, 2006
• Expiry date: Nov 29, 2023

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0132
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.