Light emitting diode

US7151282B2 · kind B2 · utility

Assignee

• FIRECOMMS LIMITED · IE

Inventors

• John Douglas Lambkin · Blarney, IE
• Thomas McCormack · Cork, IE

Key dates

• Filing date: Jan 28, 2005
• Grant date: Dec 19, 2006
• Expiry date: Jan 28, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A green LED has a substrate, a GaN heavily n-doped bottom confining layer, an active region, an upper GaN confinement layer, and a semi-transparent ohmic contact layer. The active region has less than or equal to three highly compressively strained quantum wells. The widths of the quantum wells is less than 3 nm. The active region arrangement provides a short free carrier life-time and hence an increase in the modulation bandwidth of the LED.