Class AB enhanced transconductance source follower
US7151410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Mar 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/5012
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low voltage, high bandwidth, enhanced transconductance, source follower circuit constructed from MOS FET devices, which operates in a class AB mode. The drain current of the source follower is sensed with a folded cascode device. The sensed current is multiplied by a common source device of same type (NMOS or PMOS) as the source follower, and directed to the output load. Over limit current load at the source follower drain is sensed by a common source device of the opposite type (NMOS or PMOS), which also supplies the necessary extra current to the output load. This allows the device to supply significantly more than the quiescent current in both sourcing and sinking the output. Average power consumption for driving a given load is significantly reduced, while maintaining the large bandwidth of traditional source follower designs, and the capability for use in either voltage regulators or in a current conveyor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.