Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor
US7153453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Apr 27, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/918
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3 furnace volume.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.