Method for manufacturing high efficiency light-emitting diodes
US7153713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2005 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Jul 4, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active layer. Next, a growth-interruption step is performed, and a catalyst is introduced to form a plurality of nuclei sites on a surface of the first P-type cladding layer. A second P-type cladding layer is formed on the first P-type cladding layer according to the nuclei sites, so that the second P-type cladding layer has a surface with a plurality of mesa hillocks. Then, a contact layer is formed on the second P-type cladding layer. Subsequently, a transparent electrode is formed on the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.