Materials with enhanced properties for shallow trench isolation/premetal dielectric applications
US7153783B2 · kind B2 · utility
27Cited by
4References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2004 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.