Semiconductor device with edge structure
US7154177B2 · kind B2 · utility
4Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device has an edge termination region (15) having a plurality of trenches (17). Conductive material (20) and insulating material (19) is formed at the trenches, and surface implants (21) are formed on either side of the trenches. A conductive bridge (23) connects the surface implants (21) to allow equilibrium to be reached in reverse bias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.