RF power amplifier
US7154339B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2003 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Oct 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/211
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT,1,1 to HBT,1,N) connected to a power supply. A plurality of base resistors (Rb,1,1 to Rb,1,N) for the output transistors (HBT,1,1 to HBT,1,N) and a plurality of input capacitors (Cb,1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT,1,1 to HBT,1,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT,1,1 to HBT,1,N). The transistors (HBT,1,1 to HBT,1,N) are heterojunction bipolar transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.