Method and structure of electric field poling of Ti indiffused LiNbO3 substrates without the use of grinding process
US7155102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2004 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Oct 13, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/1204
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and structure are disclosed with a simplified approach for fabricating a LiNbO3 wafer with Ti indiffusion wafeguide on the surface that is domain inverted. The method involves indiffusing Ti into LiNbO3 with a predefined temperature and time indiffusion range, a Li enriched and dry oxygen atmosphere, which allows making optical waveguides on the z− crystal face without any significant domain inversion occurring on the z+ face of the crystal. This allows for subsequent poling without the need of any additional removal of the thin domain inverted layer which would otherwise appear on the z+ face. Even in instance where a thin domain inversion layer is formed, it is insufficient thick to prevent poling, eliminating the need for the grinding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.