Ultraviolet laser ablative patterning of microstructures in semiconductors
US7157038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Aug 12, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.