Method of patterning a thin film transistor that includes simultaneously forming a gate electrode and a pixel electrode
US7157319B2 · kind B2 · utility
4Cited by
34References
4Claims
0Family size
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Key dates
| Filing date | Jul 5, 2001 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Jul 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-precision patterning is conducted with a half-tone resist thickness being prevented from varying due to the presence/absence of a base film. A transmitting portion and two kinds of semi-transmitting portions, providing different quantities of transmitted light, are provided in a photomask for exposing a resist, and a smaller-transimitting-light-quantity semi-transmitting portion is used in a base film-present area and a large-transmitting light-quantity semi-transmitting portion is used in a base-film-free area to regulate luminous exposure while exposing, thereby forming a half-tone resist having uniform thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.