Semiconductor device with suppressed copper migration
US7157797B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 6, 2005 |
| Grant date | Jan 2, 2007 |
| Priority date | — |
| Expiry date | Jun 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having: a semiconductor substrate; a plurality of circuit regions formed on the semiconductor substrate, the circuit regions including circuits driven at multiple supply voltages; interlayer insulating film or films formed above the semiconductor substrate; copper wirings buried in the interlayer insulating film or films, a minimum wiring spacing between adjacent wirings in a same layer so that an electric field between adjacent wirings due to an applied voltage difference is set to 0.4 MV/cm or lower; and a copper diffusion preventive film formed on the interlayer insulating film, covering an upper surface of the copper wirings. A semiconductor device is provided which has copper wirings capable of realizing a high reliability in a long term, basing upon newly found knowledge of time dependent failure rate of wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.