Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
US7160386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2002 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Sep 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.