Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US7160388B2 · kind B2 · utility
88Cited by
32References
74Claims
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Key dates
| Filing date | May 17, 2002 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Dec 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.